Method of making TA.sub.2 O.sub.5 thin film by low temperature ozone plasma annealing (oxidation)
US5468687A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1994 |
| Grant date | Nov 21, 1995 |
| Priority date | — |
| Expiry date | Jul 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A method for low temperature annealing (oxidation) of high dielectric constant Ta.sub.2 O.sub.5 thin films uses an ozone enhanced plasma. The films produced are especially applicable to 64 and 256 Mbit DRAM applications. The ozone enhanced plasma annealing process for thin film Ta.sub.2 O.sub.5 reduces the processing temperature to 400.degree. C. and achieves comparable film quality, making the Ta.sub.2 O.sub.5 films more suitable for Ultra-Large Scale Integration (ULSI) applications (storage dielectric for 64 and 256 Megabit DRAMs with stack capacitor structures, etc.) or others that require low temperature processing. This low temperature process is extendable to other high dc and piezoelectric thin films which may have many other applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.