Method of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration
US5470788A · kind A · utility
51Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1994 |
| Grant date | Nov 28, 1995 |
| Priority date | — |
| Expiry date | Feb 28, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of providing interconnections to a semiconductor integrated chip designed to eliminate electromigration. The method includes the steps of forming an interconnection with segments of Al interspersed with segments of a refractory metal, wherein each aluminum segments is followed by a segment of refractory metal, aligning the aluminum and refractory metal segments with respect to each other ensuring electrical continuity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.