Seam pressure sensor employing dielectically isolated resonant beams and related method of manufacture
US5473944A · kind A · utility
20Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Aug 18, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure transducer comprising at least one diaphragm formed in a wafer of semiconducting material, the at least one diaphragm being spaced from a first surface of the wafer, a first layer of semiconducting material disposed over the at least one diaphragm, the first layer forming at least one resonating beam over the at least one diaphragm, and a plurality of resistor elements formed from a third layer of semiconducting material disposed over the at least one resonating beam, and isolation means for dielectrically isolating the at least one resonating beam from the at least one diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.