Method of measuring electric charge of semiconductor wafer
US5475319A · kind A · utility
12Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Jun 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Amounts of electric charges in a semiconductor wafer are measured by using a non-destructive measuring device. First and second flat-band voltages before and after a specific charging process are measured with a non-destructive C-V measurement device. A gap between a test electrode and a surface of a semiconductor wafer is also measured before and after performing the charging process. The electric charge accumulated proximate the surface of the semiconductor wafer is determined according to measured values of the gap and the flat-band voltages before and after performing the charging process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.