Semiconductor device and method for making thereof
US5476806A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1994 |
| Grant date | Dec 19, 1995 |
| Priority date | — |
| Expiry date | Feb 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
The capacitor area is increased with a cylinder-shaped first storage electrode overlapped with a second electrode in an area which covers two adjacent cells. Included in a semiconductor device using the invention may be: a semiconductor substrate; a word line on the substrate; impurity regions at opposite sides of the word line in the substrate; a first contact hole on an odd impurity region; a first storage electrode connected to the first contact hole, which is overlapped with an adjacent even cell; a first sidewall storage electrode at opposite sides of the fist storage electrode; a second contact hole on the even impurity region, the second contact hole having a insulated sidewall; a second storage electrode connected to the second contact hole, which is overlapped with an adjacent odd cell; a second sidewall storage electrode at opposite sides of the second storage electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.