Plasma etch apparatus with heated scavenging surfaces
US5477975A · kind A · utility
63Cited by
3References
49Claims
0Family size
Inventors
Key dates
| Filing date | Oct 15, 1993 |
| Grant date | Dec 26, 1995 |
| Priority date | — |
| Expiry date | Oct 15, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.