Method for fabricating a bipolar power transistor
US5482873A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 14, 1995 |
| Grant date | Jan 9, 1996 |
| Priority date | — |
| Expiry date | Apr 14, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
Abstract
A method for fabricating a bipolar power transistor is disclosed, wherein the bipolar power transistor is made on a first type of heavily doped substrate. The method comprises the following steps of: sequentially forming a first type of doped layer, a first type of lightly doped layer, a second type of lightly doped layer, a second type of doped layer and a barrier layer on the first type of heavily doped substrate; forming an opening on a predetermined position of the barrier layer; using the barrier layer as a mask, then a first type of dopant being doped into the second type of doped layer by the opening and being driven in to form a first type of heavily doped region under the barrier layer; forming a recession thereon which extends to the second type of lightly doped layer through the second type of doped layer; doping a first type of dopant into the second type of doped layer and the second type of lightly doped layer in the recession to form a first type of doped region which surrounds the recession and is adjacent to the first type of heavily doped region; and forming a conductive layer in the recession, and doping a first type of dopant into the conductive layer, thereby t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.