Method for applying photoresist
US5486267A · kind A · utility
16Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1994 |
| Grant date | Jan 23, 1996 |
| Priority date | — |
| Expiry date | Feb 28, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for substrate preparation prior to applying photoresist to the substrate. A substrate, such as a TEOS-based silicon dioxide or silicon nitride film, is selected and treated with reactive oxygen. The reactive oxygen can comprise ozone or ozone plasma, for example. After treatment of the substrate, the photoresist, preferably an acid-catalyzed photoresist for use with deep UV sensitization, is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.