Patent · US Expired

Deep ultraviolet microlithography system

US5488229A · kind A · utility

74Cited by
9References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 4, 1994
Grant dateJan 30, 1996
Priority date
Expiry dateOct 4, 2014

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70575
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A high resolution, deep UV photolithography system includes a deep UV radiation source for generating a beam of narrow wavelength deep ultraviolet radiation along a path, mask receiving structure in the path, a first optical system in the path for homogenizing and shaping the deep UV energy in the path; and a second optical system in the path for directing radiation energy onto the surface of a substrate to be processed, the second optical system including large area mirror structure having a numerical aperture of at least 0.3 and a plurality of refractive elements disposed between the mask receiving structure and the substrate for compensating (reducing) image curvature introduced into the system by the large area mirror structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.