Method for generating excited neutral particles for etching and deposition processes in semiconductor technology with a plasma discharge fed by microwave energy
US5489362A · kind A · utility
21Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1994 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Aug 29, 2014 |
Classification
- Technology area (CPC E)Fixed Constructions
- CPC primaryE05Y2900/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma discharge tube (5) having a diameter that corresponds to a quarter wavelength of the standing wave is selected and the waveguide system (2) is dimensioned and tuned such that the standing wave forms a first voltage maximum at a first side of the plasma discharge tube (5) and the standing wave is also supplied reflected, so that it forms a second, anti-phase voltage maximum at a second side of the plasma discharge tube (5) that lies opposite the first side and faces toward an end termination (12) of the waveguide system (2). A controlled magnetic field is applied in order to achieve an especially low working pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.