Methods for processing semiconductors to reduce surface particles
US5489557A · kind A · utility
43Cited by
13References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 21, 1995 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Feb 21, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for removing particulates from the surfaces of semiconductor materials, such as silicon substrates and wafers. The methods use repeated oxide growth steps and intervening oxide removal. Rinses are preferably used between the oxide growth and removal steps, such as with purified water. The oxide growth steps use an oxidation agent and a base, for example hydrogen peroxide and ammonium hydroxide. The oxide removal steps use a suitable oxide removal agent such as a hydrogen halide acid, for example hydrogen fluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.