Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells
US5491657A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1995 |
| Grant date | Feb 13, 1996 |
| Priority date | — |
| Expiry date | Feb 24, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided an improved method for bulk (or byte) programming an array of flash EEPROM memory cells. A negative voltage is applied to the substrate of the array. A reference voltage of zero volts is applied simultaneously to the drain regions of selected memory cells that are to be programmed. There is also applied simultaneously the same reference voltage of zero volts to the control gates of the selected memory cells. The present invention provides for low current consumption and fast programming of the memory cell, which require only a single, low voltage power supply. The endurance reliability is greater than 100,000 cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.