Plasma process system and method
US5494522A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1994 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | Mar 17, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/184
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma process system for producing gas plasma in an air-tight chamber by high frequency power to process a substrate with the gas plasma comprising a lower electrode on which the substrate to be plasma-processed is mounted, an upper electrode arranged above the lower electrode, a plasma generator circuit for generating plasma between the upper and the lower electrode, a power source for supplying high frequency power to the plasma generator circuit, and bias generator for generating negative voltage in the upper or lower electrode when high frequency power is supplied from the power source to the upper or lower electrode, wherein the plasma generator circuit includes transformer for supplying a part of high frequency power, which is supplied from the power source, to the bias generator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.