Plasma processing apparatus and method of processing substrates by using same apparatus
US5496410A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1993 |
| Grant date | Mar 5, 1996 |
| Priority date | — |
| Expiry date | Mar 10, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a plasma processing apparatus which forms a gaseous raw material into a plasma by using electron cyclotron resonance and processes a substrate, leading-edge opening portions of an introduction tube into which a gaseous raw material is introduced are formed in the inner wall surface of the container in such a way that they do not project within the vacuum container. A heater is wound around the introduction pipe so that the opening portions thereof can be heated. With this construction, even if a gaseous raw material which is a liquid or solid at normal temperature and normal pressure is made to flow, the gaseous raw material can be prevented from being liquefied or solidified in the opening portions of the introduction pipe, and the opening portions of the introduction pipe can be prevented from being clogged. In addition, since there are no projections within the vacuum container, the propagation of microwaves is not impeded, making it possible to uniformity process the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.