Positive-working quinonediazide photoresist composition containing a cyclohexyl-substituted triphenylmethane compound
US5501936A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved positive-working photoresist composition useful in the fine patterning work of a resist layer is proposed which is capable of giving a patterned resist layer having excellent resolution, heat resistance and orthogonality of the cross sectional profile of a line pattern with a high sensitivity to actinic rays and a wide range of the focusing depth. The photoresist composition comprises, as a uniform mixture in the form of a solution, (a) an alkali-soluble novolac resin, (b) a naphthoquinone-1,2-diazido group-containing compound as a photosensitizing ingredient and (c) a specific phenolic triphenyl methane compound substituted by cyclohexyl groups on two of the phenyl groups, such as bis(3-cyclohexyl-4-hydroxy-6-methylphenyl)-3,4-dihydroxyphenyl methane or bis(3-cyclohexyl-6-hydroxy-4-methylphenyl)-3,4-dihydroxyphenyl methane, in a specified amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.