Apparatus and method for electrical measurement of semiconductor wafers
US5504437A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Apr 2, 1996 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2831
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A stage 130 includes a metal base and an anti-metal contamination film formed on the metal base a semi-conductor wafer 120. The anti-metal contamination film is constructed of a material selected from the group consisting of a semi-conductor film, a semi-conductor oxide film, a semi-conductor nitride film, a semi-conductor carbide film, and a polytetrafluoroethylene film. The rear face of the semi-conductor wafer 120 mounted on the stage 130 is in direct contact with the anti-metal contamination film but not with the metal surface. The anti-metal contamination film, which does not contain simple substances of metals, effectively protects the rear face of the semi-conductor wafer 120 from contamination metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.