Process for depositing silicon dioxide by liquid phase diposition
US5506006A · kind A · utility
10Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 1, 1995 |
| Grant date | Apr 9, 1996 |
| Priority date | — |
| Expiry date | Jun 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for depositing a silicon dioxide (SiO.sub.2) film on a substrate by liquid phase deposition is developed. Silicic acid is used instead of SiO.sub.2 powder to saturate hydrofluorosilicic acid so as to shorten the period required for preparing the solution to 3 hours. Water is used to supersaturate the solution. The corresponding deposition rate of SiO.sub.2 is about 50 nm per hour.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.