Method of sealing useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
US5507499A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1995 |
| Grant date | Apr 16, 1996 |
| Priority date | — |
| Expiry date | May 5, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T403/477
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.