Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
US5514245A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1995 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Apr 28, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/959
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of chemically-mechanically planarizing (CMP) a dielectric layer formed on semiconductor wafer includes planarizing the dielectric layer with a polishing pad formed of a hard low compressibility pad material, and then polishing the dielectric layer with a polishing pad formed of a soft compressible pad material to remove micro-scratches formed during the planarization step. During the planarization step, the hard low compressibility pad material does not deform into the surface of the dielectric layer and the dielectric layer is planarized along a single contact plane. A loading effect in which the a material compresses and produces an irregular surface is thus eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.