Specially doped precursor solutions for use in methods of producing doped ABO.sub.3 -type average perovskite thin-film capacitors
US5516363A · kind A · utility
22Cited by
4References
24Claims
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Key dates
| Filing date | Sep 8, 1994 |
| Grant date | May 14, 1996 |
| Priority date | — |
| Expiry date | Sep 8, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Metal doping agents are introduced into metal polyoxyalkylated liquid precursor solutions for use in processes for forming thin-layer capacitors (10) to be used in integrated circuits such as DRAMS and the like. The dopants serve to reduce capacitor leakage current by altering a dominant type of electron emission, as determined by a change in the slope of a line plotted as leakage current versus bias voltage. The specially doped precursor solutions preferably include mixtures of Ce, Cr, Dy, Mn, and Ti moieties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.