N-InP Schottky diode structure and a method of making the same
US5517054A · kind A · utility
4Cited by
2References
2Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 21, 1995 |
| Grant date | May 14, 1996 |
| Priority date | — |
| Expiry date | Apr 21, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A new Schottky diode structure, Pt/Al/n-InP, is disclosed in the present invention. The thickness of Al layer of the Schottky diode structure is restricted in a range of about 80-120 .ANG.. This structure gives a barrier height of 0.74 eV and an ideality factor of 1.11 after it was annealed at 300.degree. C. for 10 min. This is due to the formation of Aluminum-oxide, as the interfacial layer to improve barrier height. A method of preparing this Schottky diode structure is also disclosed in the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.