Inventor · Hsinchu, TW

Chung-Len Lee

7Patents
4h-index
7Co-inventors
42Inventor score

Filing activity: Sep 2, 1992 → Aug 13, 1998

Most-cited inventions

PatentTitleAreaCited byStatus
US5567638A Method for suppressing boron penetration in PMOS with nitridized polysilicon gate Electricity 63 Expired
US5429966A Method of fabricating a textured tunnel oxide for EEPROM applications Emerging Cross-Sectional Technologies 47 Expired
US5347161A Stacked-layer structure polysilicon emitter contacted p-n junction diode Electricity 12 Expired
US5668481A Multiple pattern sequence generation based on inverting non-linear autonomous machine Physics 6 Expired
US5517054A N-InP Schottky diode structure and a method of making the same Electricity 4 Expired
US6103582A Method to suppress boron penetration in P+ mosfets Electricity 3 Expired
US5610098A N-INP Schottky diode structure and a method of making the same Electricity 2 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.