Maskless method for formation of a field implant channel stop region
US5518941A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1994 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Sep 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides a method of forming a field implant channel stop region and a device using a field implant channel stop region to improve isolation between devices in integrated circuits using field effect transistors. The field implant channel stop region is formed without the use of an extra mask or extra masking steps by means of either a large angle tilted ion implant beam or a higher energy normally directed ion implant beam. The field implant channel stop region is formed with the mask used to form the light doped drain region in place. The field implant channel stop region forms a local increase in the doping level in the device well thereby forming the channel stop region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.