Insulated gate bipolar transistor with reverse conducting current
US5519245A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1993 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | May 5, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
An insulated gate bipolar transistor has a reverse conducting function built therein. A semiconductor layer of a first conduction type is formed on the side of a drain, a semiconductor layer of a second conduction type for causing conductivity modulation upon carrier injection is formed on the semiconductor layer of the first conduction type, a semiconductor layer of the second conduction type for taking out a reverse conducting current opposite in direction to a drain current is formed in the semiconductor layer of the second conduction type which is electrically connected to a drain electrode, and a semiconductor layer of the second conduction type is formed at or in the vicinity of a pn junction, through which carriers are given and received to cause conductivity modulation, with a high impurity concentration resulting in a path for the reverse conducting current into a pattern not impeding the passage of the carriers. Therefore, the built-in reverse conducting function has a low operating resistance, a large reverse current can be passed, there is no increase in on-resistance, and the turn-off time can be shortened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.