Corner protected shallow trench isolation device

US5521422A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jack A. Mandelman · Stormville, US
• Brian J. Machesney · Burlington, US
• Hing Wong · Norwalk, US
• Michael D. Armacost · Winooski, US
• Pai-Hung Pan · Boise, US

Key dates

• Filing date: Dec 2, 1994
• Grant date: May 28, 1996
• Expiry date: Dec 2, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76224
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.