Patent · US Expired

Method for making dynamic random access memory cell capacitor

US5523542A · kind A · utility

28Cited by
2References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 15, 1995
Grant dateJun 4, 1996
Priority date
Expiry dateMay 15, 2015

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/435

Abstract

A random access memory (RAM) cell capacitor and its method of fabrication. A bottom electrode plate of the capacitor is provided with a plurality of islands disposed on the surface thereof so as to attain an increase in the capacitance thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.