Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5523589A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1994 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Sep 20, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.