Method of depositing conductors in high aspect ratio apertures under high temperature conditions
US5529670A · kind A · utility
27Cited by
12References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 22, 1993 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Dec 22, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4076
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2.times. what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450.degree. C.) during the deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.