Method of making wide band gap field emitter
US5536193A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 1994 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Jun 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30457
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emitter comprising an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.