Method for etching boron nitride
US5536360A · kind A · utility
236Cited by
9References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 1995 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Jan 3, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/113
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The subject invention provides a method of enhancing the etch rate of boron nitride which comprises doping a layer of boron nitride with an element from Group IVA of the Periodic Table of the Elements, such as silicon, carbon, or germanium. The doped boron nitride layer can be wet etched at a faster rate with hot phosphoric acid than was possible prior to doping the boron nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.