Monolithic semiconductor body with convex structure

US5539216A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Bich-Yen Nguyen · Austin, US
• Marius Orlowski · Meylan, FR
• Philip J. Tobin · Austin, US
• Jim Hayden · Austin, US
• Jack M. Higman · Austin, US

Key dates

• Filing date: Oct 27, 1994
• Grant date: Jul 23, 1996
• Expiry date: Oct 27, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/915

Abstract

A monolithic semiconductor body (26) resides in an opening (16) formed in an insulating layer (14). The monolithic semiconductor body (26) includes an elongated region (20) filling the opening (16) in the insulating layer (14) and contacting a semiconductor region (12). The monolithic semiconductor body (26) further includes a surface region (24) overlying the elongated region (20) and a portion of the surface (22) of the insulating layer (14) adjacent to the opening (16). The monolithic semiconductor body (26) is fabricated by first depositing a layer of semiconductor material into the opening (16), then planarizing the surface of the insulating layer (14). Next, a selective deposition process is carried out to form the surface region (24) using the semiconductor material in the opening (16) as a nucleation site. The radius of curvature of the surface region (24) is determined by the amount of controlled overgrowth during the selective deposition process.