Silicon carbide thyristor
US5539217A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1993 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Aug 9, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/00
Abstract
The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.