Method of fabricating a self-aligned contact using a liquid-phase oxide-deposition process
US5547900A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 26, 1995 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | May 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides a method of fabricating a self-aligned contact of a semiconductor device using a liquid-phase oxide-deposition (LPD) process. A gate electrode and source/drain regions are formed on a semiconductor substrate. A layer of photoresist is coated and patterned overlying an area of the semiconductor substrate that will form a contact. Using the photoresist as a mask, an oxide layer is formed in self-aligned manner by a liquid-phase deposition process. The photoresist is removed to expose a contact portion of the source/drain regions. An interlevel conductive layer is formed on the semiconductor substrate, wherein the interlevel conductive layer is connected to the source/drain regions through the contact portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.