Jengping Lin
15Patents
9h-index
9Co-inventors
57Inventor score
Filing activity: Jan 6, 1995 → Apr 3, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5502009A | Method for fabricating gate oxide layers of different thicknesses | Emerging Cross-Sectional Technologies | 84 | Expired |
| US5510279A | Method of fabricating an asymmetric lightly doped drain transistor device | Electricity | 56 | Expired |
| US5663586A | Fet device with double spacer | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5550079A | Method for fabricating silicide shunt of dual-gate CMOS device | Electricity | 31 | Expired |
| US5504038A | Method for selective tungsten sidewall and bottom contact formation | Electricity | 23 | Expired |
| US5641698A | Method of fabricating FET device with double spacer | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5547900A | Method of fabricating a self-aligned contact using a liquid-phase oxide-deposition process | Electricity | 15 | Expired |
| US5679602A | Method of forming MOSFET devices with heavily doped local channel stops | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5612239A | Use of oxide spacers formed by liquid phase deposition | Electricity | 11 | Expired |
| US5550074A | Process for fabricating MOS transistors having anti-punchthrough implant regions formed by the use of a phase-shift mask | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5652160A | Method of fabricating a buried contact structure with WSi.sub.x sidewall spacers | Electricity | 4 | Expired |
| US5966604A | Method of manufacturing MOS components having lightly doped drain structures | Electricity | 3 | Expired |
| US6215546A | Method of optical correction for improving the pattern shrinkage caused by scattering of the light | Physics | 2 | Expired |
| US6303491A | Method for fabricating self-aligned contact hole | Electricity | 2 | Expired |
| US6107175A | Method of fabricating self-aligned contact | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.