Method for forming capped copper electrical interconnects
US5549808A · kind A · utility
65Cited by
8References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 1995 |
| Grant date | Aug 27, 1996 |
| Priority date | — |
| Expiry date | May 12, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S205/917
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to a new structure and method for capped copper electrical interconnects. More particularly, the invention encompasses a novel structure in which one or more of the copper electrical interconnects within a semiconductor substrate are capped to obtain a robust electrical interconnect structure. A method for obtaining such capped copper electrical interconnect structure is also disclosed. These capped interconnects can be a single layer or multi-layer structures. Similarly, the interconnect structure that is being capped can itself be composed of single or multi-layered material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.