Non-destructive measuring sensor for semiconductor wafer and method of manufacturing the same
US5554939A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1993 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Dec 21, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/071
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.