Method of making corrugated vertical stack capacitor (CVSTC)

US5556802A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Paul E. Bakeman, Jr. · South Burlington, US
• Bomy Chen · Cupertino, US
• John Cronin · Jericho, US
• Steven J. Holmes · Colchester, US
• Hing Wong · Norwalk, US

Key dates

• Filing date: Jun 7, 1995
• Grant date: Sep 17, 1996
• Expiry date: Jun 7, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/949

Abstract

A method for forming a capacitor on a substrate having a contact below a top layer including the steps of: PA1 Spinning on a layer of photoresist material. Exposing the photoresist to light to establish a standing wave pattern to fix prominences of photoresist separated by separation areas. Each prominence extends a prominence height from the top layer to a top. Developing the photoresist to fix an erose face on each prominence, each face extending from the top layer to the top. Depositing a first oxide intermediate prominences to effect accumulation of the first oxide to an oxide height at least equal to the prominence height. Etching the first oxide to expose each top. Dissolving the photoresist to uncover oxide mandrels. Each mandrel extends a mandrel height from the top layer to a mandrel top; each mandrel has an erose mandrel face intermediate the top layer and the mandrel top. Etching the top layer to expose the contact. Depositing a first silicon material over selected mandrels, the top layer, and the contact intermediate the selected mandrels. Depositing photoresist over the first silicon. Etching the photoresist and the first silicon to the mandrel height to establish a no…