Inventor · Cupertino, CA, US

Bomy Chen

92Patents
22h-index
121Co-inventors
91Inventor score

Filing activity: Jul 22, 1994 → Sep 12, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6815704B1 Phase change memory device employing thermally insulating voids Electricity 286 Expired
US6937507B2 Memory device and method of operating same Physics 247 Expired
US6927410B2 Memory device with discrete layers of phase change memory material Electricity 240 Expired
US5675185A Semiconductor structure incorporating thin film transistors with undoped cap oxide layers Electricity 86 Expired
US7238959B2 Phase change memory device employing thermally insulating voids and sloped trench, and a method of making same Emerging Cross-Sectional Technologies 85 Expired
US7050316B1 Differential non-volatile content addressable memory cell and array using phase changing resistor storage elements Physics 66 Expired
US6806531B1 Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation Electricity 55 Expired
US7307308B2 Buried bit line non-volatile floating gate memory cell with independent controllable control gate in a trench, and array thereof, and method of formation Electricity 54 Expired
US6958273B2 Self-aligned method of forming a semiconductor memory array of floating gate memory cells with buried floating gate, pointed floating gate and pointed channel region, and a memory array made thereby Electricity 54 Expired
US6287913A Double polysilicon process for providing single chip high performance logic and compact embedded memory structure Electricity 53 Expired
US7403418B2 Word line voltage boosting circuit and a memory array incorporating same Physics 35 Expired
US6022766A Semiconductor structure incorporating thin film transistors, and methods for its manufacture Electricity 35 Expired
US6294817A Source/drain-on insulator (S/DOI) field effect transistor using oxidized amorphous silicon and method of fabrication Electricity 35 Expired
US7012273B2 Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths Electricity 34 Expired
US6504207B1 Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same Physics 34 Expired
US6429091B1 Patterned buried insulator Electricity 30 Expired
US5578854A Vertical load resistor SRAM cell Emerging Cross-Sectional Technologies 26 Expired
US6294449A Self-aligned contact for closely spaced transistors Electricity 26 Expired
US5538592A Non-random sub-lithography vertical stack capacitor Emerging Cross-Sectional Technologies 26 Expired
US6297127A Self-aligned deep trench isolation to shallow trench isolation Electricity 23 Expired
US6777260B1 Method of making sub-lithographic sized contact holes Electricity 23 Expired
US6544874B2 Method for forming junction on insulator (JOI) structure Electricity 22 Expired
US5665629A Four transistor SRAM process Electricity 22 Expired
US7598561B2 NOR flash memory Physics 20 Active
US7800159B2 Array of contactless non-volatile memory cells Electricity 20 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.