Plasma ashing method with oxygen pretreatment
US5560803A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 30, 1994 |
| Grant date | Oct 1, 1996 |
| Priority date | — |
| Expiry date | Nov 30, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for ashing a resist on a wafer in a plasma reaction chamber comprises the steps of flowing a non-activated oxygen containing gas into the plasma reaction chamber immediately before loading the wafer to the plasma reaction chamber, and then carrying out a plasma ashing of the resist. In one of the preferred embodiments, after the reaction chamber was exposed to the atmosphere and then evacuated to vacuum, a mixed gas of oxygen (90% in volume) and water vapor (10% in volume) was flown into the reaction chamber with 1000 seem and 1 Torr for 5 min. and subsequently the ashing was carried out. The method prevents the ashing rate from decreasing with ashing time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.