Non-volatile programmable bistable multivibrator with reduced parasitics in reading mode notably for memory redundancy circuit
US5561621A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1995 |
| Grant date | Oct 1, 1996 |
| Priority date | — |
| Expiry date | Jan 31, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/78
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to integrated circuits and, notably, to memories. A description is given of a bistable type of programmable, non-volatile memory, namely a memory that can take one state or another by the programming of one of two floating-gate transistors of the cell. To program a cell such as this, there are two transistors for the application of a programming voltage (VPRG). In order that the signals going through the programming paths (in particular the address signals) may not disturb the state of the cell in reading mode, provision is made for two isolation transistors interposed between the transistors for the application of the programming voltage and the drains of the floating-gate transistors. These isolation transistors are made conductive by a signal CAMSEL solely for a programming operation and solely for only one group of cells to be programmed. These cells can be applied notably to the storage of defective address elements in the redundancy circuits of large-capacity memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.