Method of enhancing the current gain of bipolar junction transistors
US5565370A · kind A · utility
6Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1995 |
| Grant date | Oct 15, 1996 |
| Priority date | — |
| Expiry date | Feb 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/124
Abstract
The present invention teaches a method and structure of enhancing the current gain characteristics of a bipolar junction transistor using a semiconductor substrate comprising a base, an emitter and a collector and an interface at the emitter, such that a carrier current conducts between the base and the emitter. Further, a first polysilicon layer is formed superjacent the interface, and is implanted with O.sub.2. Subsequently, the substrate is heated such that the emitter interface is obstructed by a silicon dioxide formation, thereby blocking a portion of carrier current from passing through the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.