Method of making bipolar junction transistor
US5569613A · kind A · utility
8Cited by
5References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 1, 1995 |
| Grant date | Oct 29, 1996 |
| Priority date | — |
| Expiry date | Feb 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/60
Abstract
A structural configuration and fabrication process of a bipolar junction transistor (BJT) semiconductor device having improved current gain. The fabrication process provides a P-type heavily-doped region underneath a P-type lightly-doped base region. The P-type heavily-doped region underneath the P-type lightly-doped base region prevents electron carriers from escaping from beneath the base region of the transistor, helping the collection in a collector of electron carriers emitted by an emitter of the BJT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.