High breakdown voltage silicon carbide transistor
US5569937A · kind A · utility
37Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1995 |
| Grant date | Oct 29, 1996 |
| Priority date | — |
| Expiry date | Aug 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a channel insert (14) that also lowers the on-resistance of the transistor (10). A damage termination layer (27) is utilized to facilitate providing a high breakdown voltage. Field plates (23,24) also assists in increasing the breakdown voltage and decreasing the on-resistance of the transistor (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.