Method of optical lithography using phase shift masking
US5573890A · kind A · utility
103Cited by
4References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 18, 1994 |
| Grant date | Nov 12, 1996 |
| Priority date | — |
| Expiry date | Jul 18, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70433
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gate pattern with the active gate pattern and which divides the Intersection into categories of stacks where a slightly different phase assignment rule is employed for the different stacks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.