Lateral bipolar transistor and FET
US5574306A · kind A · utility
12Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1995 |
| Grant date | Nov 12, 1996 |
| Priority date | — |
| Expiry date | Jul 10, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/009
Abstract
A lateral bipolar transistor and method of making the transistor are disclosed. The device is made by etching a trench around a central region of a semiconductor body. An emitter is buried beneath the surface of this central area and contact to it is made via a self-alignment technique. The collector region of the transistor is contacted through the floor of the trench while the base region of the transistor is contacted in a region that surrounds the trench. The described method is compatible with the simultaneous manufacture of FET devices on the same chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.