TFEL device with injection layer
US5581150A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1995 |
| Grant date | Dec 3, 1996 |
| Priority date | — |
| Expiry date | Oct 13, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/917
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A TFEL structure is disclosed that includes first and second electrode layers sandwiching a TFEL stack including at least one insulator layer and a novel three layer laminate structure. The three-layer laminate structure includes an alkaline earth thiogallate phosphor layer, a nucleating layer and an injection layer. The nucleating layer lies between the phosphor layer and the injection layer. The injection layer provides a charge injection function through the nucleating layer for the thiogallate phosphor layer which is of high crystallinity at its interface with the nucleating layer. A preferred injection layer includes indium, for example as the metal or as indium tin oxide. The best material for the nucleating layer is zinc sulfide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.