Method of forming a bonding portion
US5581874A · kind A · utility
61Cited by
9References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1995 |
| Grant date | Dec 10, 1996 |
| Priority date | — |
| Expiry date | Mar 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process apparatus comprises a process chamber containing a semiconductor wafer, a gas being able to be supplied to and exhausted from the process chamber, a support table for supporting an object to be processed, which is contained in the process chamber, a gas supply system for supplying the gas into the process chamber, and a gas exhaust system for exhausting the gas from the process chamber. An inner wall of the process chamber and the support table are formed of an aluminum-based material, and the surfaces of these are brought into contact with a fluorine-containing gas, thereby coating the surfaces with AlF.sub.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.