Method for making a fine annular charge storage electrode in a semiconductor device using a phase-shift mask
US5583069A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1995 |
| Grant date | Dec 10, 1996 |
| Priority date | — |
| Expiry date | Jul 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
Abstract
The present invention provides a method for making a fine annular charge storage electrode in a semiconductor device, which is capable of easily forming the charge storage electrode having a double cylinder-shaped structure and a fine annular pattern which is smaller than the wavelength from the light source, using a phase-shift mask. Accordingly, the present invention has an effect in that the reliability of a memory device having the charge storage electrode is improved, by removing the bad contact in the double cylinder-shaped structure, and that the surface of the charge storage electrode can be easily increased from 20% to 80%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.