Method of forming a contact hole for a metal line in a semiconductor device
US5587331A · kind A · utility
18Cited by
12References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 17, 1993 |
| Grant date | Dec 24, 1996 |
| Priority date | — |
| Expiry date | Dec 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a contact hole for a metal line in a semiconductor device, including the steps of forming a contact area on a semiconductor substrate to be connected to a metal line, forming a groove, of which side is insulated from a contact portion on a bottom and at a side of the groove, forming an insulating layer on a whole surface of the semiconductor substrate, and forming a contact hole by removing a portion of the insulating layer on the barrier metal contact portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.