Light-emitting semiconductor device using group III nitrogen compound
US5587593A · kind A · utility
46Cited by
6References
1Claims
0Family size
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Key dates
| Filing date | Apr 19, 1995 |
| Grant date | Dec 24, 1996 |
| Priority date | — |
| Expiry date | Apr 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
Abstract
A light-emitting semiconductor device includes a sapphire substrate whose main surface orientation is tilted by 1 to 4 degrees from its axis "a" <1120>, and layers epitaxially formed thereon. Tilting the surface orientation of the sapphire substrate enables uniform doping of a p-type impurity into the layers epitaxially grown thereon. As a result, the luminous intensity of the light-emitting semiconductor device is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.